Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT (2015)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/wipda.2015.7369293
Publication URI: http://dx.doi.org/10.1109/wipda.2015.7369293
Type: Conference/Paper/Proceeding/Abstract