Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices (2015)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.411
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.411
Type: Journal Article/Review
Parent Publication: Materials Science Forum