Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling (2017)
Attributed to:
Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2719898
Publication URI: http://dx.doi.org/10.1109/ted.2017.2719898
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 9