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AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels (2016)

First Author: Guo Y

Attributed to: Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4951004

Publication URI: http://dx.doi.org/10.1063/1.4951004

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 20