AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels (2016)

First Author: Guo Y
Attributed to:  Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4951004

Publication URI: http://dx.doi.org/10.1063/1.4951004

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 20