Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors (2017)

First Author: Yang L

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2665598

Publication URI: http://dx.doi.org/10.1109/ted.2017.2665598

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4