Development, characterisation and simulation of wafer bonded Si-on-SiC substrates (2018)
Attributed to:
Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mssp.2017.10.020
Publication URI: http://dx.doi.org/10.1016/j.mssp.2017.10.020
Type: Journal Article/Review
Parent Publication: Materials Science in Semiconductor Processing