Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric (2018)

First Author: Ma P

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5003662

Publication URI: http://dx.doi.org/10.1063/1.5003662

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 2