As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction (2018)

First Author: Zhang J
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2017.11.026

Publication URI: http://dx.doi.org/10.1016/j.microrel.2017.11.026

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability