Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs (2017)

First Author: Ortiz Gonzalez J
Attributed to:  Underpinning Power Electronics 2012: Components Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2017.06.082

Publication URI: http://dx.doi.org/10.1016/j.microrel.2017.06.082

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability