Towards substrate engineering of graphene-silicon Schottky diode photodetectors. (2018)
Attributed to:
Instrument to identify defects and impurities in wide band gap semiconductors via excited states
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/c7nr09591k
PubMed Identifier: 29388650
Publication URI: http://europepmc.org/abstract/MED/29388650
Type: Journal Article/Review
Volume: 10
Parent Publication: Nanoscale
Issue: 7
ISSN: 2040-3364