Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes (2017)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2017.02.047
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2017.02.047
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth