One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed Al x O y Gate Dielectric (2018)

First Author: Cai W

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2798061

Publication URI: http://dx.doi.org/10.1109/led.2018.2798061

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 3