Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs (2017)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.23919/ispsd.2017.7988986
Publication URI: http://dx.doi.org/10.23919/ispsd.2017.7988986
Type: Conference/Paper/Proceeding/Abstract