Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications (2017)
Attributed to:
Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/essderc.2017.8066635
Publication URI: http://dx.doi.org/10.1109/essderc.2017.8066635
Type: Conference/Paper/Proceeding/Abstract