The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices (2017)
Attributed to:
Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.897.747
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.897.747
Type: Journal Article/Review
Parent Publication: Materials Science Forum