Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation (2016)
Attributed to:
Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.858.844
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.858.844
Type: Journal Article/Review
Parent Publication: Materials Science Forum