Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions (2018)
Attributed to:
Nano-rectennas for heat-to-electricity conversion
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2018.2807621
Publication URI: http://dx.doi.org/10.1109/ted.2018.2807621
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 4