Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions (2018)

First Author: Wang Y

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2018.2807621

Publication URI: http://dx.doi.org/10.1109/ted.2018.2807621

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4