Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO 2 / Al 2 O 3 Gate Stack (2018)

First Author: Arith F
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2807620

Publication URI: http://dx.doi.org/10.1109/led.2018.2807620

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 4