Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus (2018)

First Author: Colston G
Attributed to:  Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aade67

Publication URI: http://dx.doi.org/10.1088/1361-6641/aade67

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 11