GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric (2018)

First Author: Zhu G
Attributed to:  Nano-rectennas for heat-to-electricity conversion funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aad8d7

Publication URI: http://dx.doi.org/10.1088/1361-6641/aad8d7

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 9