Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate. (2017)

First Author: Konishi T
Attributed to:  Strain engineered InAs/GaAs quantum dots for long wavelength emission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/srep42606

PubMed Identifier: 28211899

Publication URI: http://europepmc.org/abstract/MED/28211899

Type: Journal Article/Review

Volume: 7

Parent Publication: Scientific reports

ISSN: 2045-2322