A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer. (2017)

First Author: Mohammadi V

Attributed to: Future Liquid Metal Engineering Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41598-017-13100-0

PubMed Identifier: 29038490

Publication URI: http://europepmc.org/abstract/MED/29038490

Type: Journal Article/Review

Volume: 7

Parent Publication: Scientific reports

Issue: 1

ISSN: 2045-2322