Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy (2018)
Attributed to:
Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aae627
Publication URI: http://dx.doi.org/10.1088/1361-6641/aae627
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 12