Acceptor levels of the carbon vacancy in 4 H -SiC: Combining Laplace deep level transient spectroscopy with density functional modeling (2018)
Attributed to:
Instrument to identify defects and impurities in wide band gap semiconductors via excited states
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5063773
Publication URI: http://dx.doi.org/10.1063/1.5063773
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 24