AC NBTI of Ge pMOSFETs: Impact of energy alternating defects on lifetime prediction (2015)

First Author: Ma J
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/vlsit.2015.7223692

Publication URI: http://dx.doi.org/10.1109/vlsit.2015.7223692

Type: Conference/Paper/Proceeding/Abstract