Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices (2018)

First Author: Žurauskaite L
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/08607.0067ecst

Publication URI: http://dx.doi.org/10.1149/08607.0067ecst

Type: Journal Article/Review

Parent Publication: ECS Transactions

Issue: 7