3C-Si? Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-Si? Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE) (2018)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.924.913
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.924.913
Type: Journal Article/Review
Parent Publication: Materials Science Forum
ISSN: 02555476