Achieving high performance Ga 2 O 3 diodes by adjusting chemical composition of tin oxide Schottky electrode (2019)

First Author: Du L

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab1721

Publication URI: http://dx.doi.org/10.1088/1361-6641/ab1721

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 7