Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors (2019)

First Author: Zhu G

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jpcs.2018.12.021

Publication URI: http://dx.doi.org/10.1016/j.jpcs.2018.12.021

Type: Journal Article/Review

Parent Publication: Journal of Physics and Chemistry of Solids