Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting. (2019)
Attributed to:
Oxford Quantum Materials Platform Grant
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevlett.123.096602
PubMed Identifier: 31524479
Publication URI: http://europepmc.org/abstract/MED/31524479
Type: Journal Article/Review
Volume: 123
Parent Publication: Physical review letters
Issue: 9
ISSN: 0031-9007