Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb (2019)
Attributed to:
Tier 2 Hub in Materials and Molecular Modelling
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.100.035207
Publication URI: http://dx.doi.org/10.1103/physrevb.100.035207
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 3