Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (2019)
Attributed to:
Silicon Compatible GaN Power Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5049220
Publication URI: http://dx.doi.org/10.1063/1.5049220
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 3