Schottky-barrier thin-film transistors based on HfO2-capped InSe (2019)
Attributed to:
Two dimensional III-VI semiconductors and graphene-hybrid heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5096965
Publication URI: http://dx.doi.org/10.1063/1.5096965
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 3