Solution-Processed HfO x for Half-Volt Operation of InGaZnO Thin-Film Transistors (2019)

First Author: Cai W

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.9b00325

Publication URI: http://dx.doi.org/10.1021/acsaelm.9b00325

Type: Journal Article/Review

Parent Publication: ACS Applied Electronic Materials

Issue: 8