📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! Tell us what works, what doesn't, and how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community. Please send your feedback to gateway@ukri.org by 11 August 2025.

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation (2019)

First Author: Kabouche R

Attributed to: High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1142/s0129156419400032

Publication URI: http://dx.doi.org/10.1142/s0129156419400032

Type: Journal Article/Review

Parent Publication: International Journal of High Speed Electronics and Systems

Issue: 01n02