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High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation (2019)

First Author: Kabouche R

Attributed to: High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1142/s0129156419400032

Publication URI: http://dx.doi.org/10.1142/s0129156419400032

Type: Journal Article/Review

Parent Publication: International Journal of High Speed Electronics and Systems

Issue: 01n02