Improved Planar InAs Avalanche Photodiodes With Reduced Dark Current and Increased Responsivity (2019)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jlt.2019.2905535
Publication URI: http://dx.doi.org/10.1109/jlt.2019.2905535
Type: Journal Article/Review
Parent Publication: Journal of Lightwave Technology
Issue: 10