Temperature dependence of impact ionization in InAs: erratum (2014)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.22.025923
Publication URI: http://dx.doi.org/10.1364/oe.22.025923
Type: Journal Article/Review
Parent Publication: Optics Express
Issue: 21