Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel (2020)
Attributed to:
Nano-rectennas for heat-to-electricity conversion
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab7c7a
Publication URI: http://dx.doi.org/10.1088/1361-6641/ab7c7a
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 5