Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers. (2020)
Attributed to:
Smart Flexible Quantum Dot Lighting
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsomega.0c02225
PubMed Identifier: 32905305
Publication URI: http://europepmc.org/abstract/MED/32905305
Type: Journal Article/Review
Volume: 5
Parent Publication: ACS omega
Issue: 34
ISSN: 2470-1343