Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias (2020)
Attributed to:
Engineering van der Waals heterostructures: from atomic level layer-by-layer assembly to printable innovative devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.101.085118
Publication URI: http://dx.doi.org/10.1103/physrevb.101.085118
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 8