Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects (2020)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/abcb34
Publication URI: http://dx.doi.org/10.1088/1361-6463/abcb34
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 10