Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability (2018)

First Author: Seoane N
Attributed to:  Modelling of Carrier Transport in Ultra Thin Body Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2785325

Publication URI: http://dx.doi.org/10.1109/ted.2017.2785325

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 2