Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness. (2018)

First Author: Nagy D
Attributed to:  Modelling of Carrier Transport in Ultra Thin Body Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/aab10f

PubMed Identifier: 29465038

Publication URI: http://europepmc.org/abstract/MED/29465038

Type: Journal Article/Review

Volume: 30

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 14

ISSN: 0953-8984