Narrowing of band gap at source/drain contact scheme of nanoscale InAs-nMOS (2018)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2018.01.006
Publication URI: http://dx.doi.org/10.1016/j.sse.2018.01.006
Type: Journal Article/Review
Parent Publication: Solid-State Electronics