Dual-Beam Irradiation Stability of Amorphous Silicon Oxycarbide at 300°C and 500°C (2020)
Attributed to:
World Class Materials Facilities at the University of Huddersfield
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1007/s11837-020-04332-z
Publication URI: http://dx.doi.org/10.1007/s11837-020-04332-z
Type: Journal Article/Review
Parent Publication: JOM
Issue: 11