Dual-Beam Irradiation Stability of Amorphous Silicon Oxycarbide at 300°C and 500°C (2020)

First Author: Su Q
Attributed to:  World Class Materials Facilities at the University of Huddersfield funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1007/s11837-020-04332-z

Publication URI: http://dx.doi.org/10.1007/s11837-020-04332-z

Type: Journal Article/Review

Parent Publication: JOM

Issue: 11