GaN surface sputter damage investigated using deep level transient spectroscopy (2021)
Attributed to:
Instrument to identify defects and impurities in wide band gap semiconductors via excited states
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mssp.2020.105654
Publication URI: http://dx.doi.org/10.1016/j.mssp.2020.105654
Type: Journal Article/Review
Parent Publication: Materials Science in Semiconductor Processing