Modeling of Grazing-Incidence X-ray Diffraction from Naphthyl End-Capped Oligothiophenes in Organic Field-Effect Transistors (2020)

First Author: Winokur M
Attributed to:  XMaS: The UK Materials Science Facility at the ESRF funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.0c00281

Publication URI: http://dx.doi.org/10.1021/acs.cgd.0c00281

Type: Journal Article/Review

Parent Publication: Crystal Growth & Design

Issue: 6