The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters (2019)

First Author: Cui M
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/icicdt.2019.8790909

Publication URI: http://dx.doi.org/10.1109/icicdt.2019.8790909

Type: Conference/Paper/Proceeding/Abstract